한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제17권2호
  • /
  • Pages.156-161
  • /
  • 2004
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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텅스텐 슬러리를 사용한 Cu-CMP 특성에서 산화제 첨가의 영향

Effects of Oxidizer Additive on the Performance of Copper-Chemical Mechanical Polishing using Tungsten Slurry

  • 이우선 (조선대학교 전기공학과) ;
  • 최권우 (조선대학교 전기공학과) ;
  • 이영식 (조선대학교 전기공학과) ;
  • 최연옥 (조선대학교 전기공학과) ;
  • 오용택 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • 발행 : 2004.02.01
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초록

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. In order to compare the removal rate and non-uniformity as a function of oxidizer contents, we used alumina-based tungsten slurry and copper blanket wafers deposited by DC sputtering method. According to the CMP removal rates and particle size distribution, and the microstructures of surface layer by SEM image as a function or oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2$O$_3$abrasive particles in CMP slurry.

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참고문헌

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