Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Atomistic Study of III-Nitride Nanotubes

3족-질화물 나노튜브의 원자단위 연구

  • 변기량 (중앙대학교 전기전자공학부) ;
  • 강정원 (중앙대학교 전기전자공학부) ;
  • 이준하 (상명대학교 컴퓨터 정보통신공학부) ;
  • 권오근 (세명대학교 인터넷 정보학부) ;
  • 황호정 (중앙대학교 전기전자공학부)
  • Published : 2004.02.01
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Abstract

We have investigated the structures, the energetic, and the nanomechanics of the single-wall boron-, aluminum-, and gallium-nitride nanotubes using atomistic simulations based on the Tersoff-type potential. The Tersoff-type potential for the III-nitride materials has effectively described the properties of the III-nitride nanotubes. Nanomechanics of boron-, aluminum-, and gallium-nitride nanotubes under the compression loading has been investigated and their Young's moduli were calculated.

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References

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