대한기계학회논문집A (Transactions of the Korean Society of Mechanical Engineers A)

  • 제28권1호
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  • Pages.85-91
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  • 2004
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  • 1226-4873(pISSN)
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  • 2288-5226(eISSN)
대한기계학회 (The Korean Society of Mechanical Engineers)
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사파이어 웨이퍼의 기계-화학적인 연마 가공특성에 관한 연구

Chemo-Mechanical Polishing Process of Sapphire Wafers for GaN Semiconductor Thin Film Growth

  • 발행 : 2004.01.01
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초록

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum of 89 arcsec. The surfaces of sapphire wafer were mechanically affected by residual stress during the polishing process. The wave pattern of optical interference of sapphire wafer implies higher abrasion rate in the edge of the wafer than its center from the Newton's ring.

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참고문헌

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