Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Characterization of Electrical Properties on Cu Diffusion in Low-k Dielectric Materials for ULSI Interconnect

반도체 배선용 저 유전 물질에서의 구리 확산에 대한 전기적 신뢰성 평가

  • Lee Hee-Chan (School of Materials Science and Engineering, Seoul National University) ;
  • Joo Young-Chang (School of Materials Science and Engineering, Seoul National University) ;
  • Ro Hyun-Wook (School of Chemistry, Seoul National University) ;
  • Yoon Do-Young (School of Chemistry, Seoul National University) ;
  • Lee Jin-kyu (School of Chemistry, Seoul National University) ;
  • Char Kook-Heon (School of Chemical Engineering, Seoul National University)
  • Published : 2004.09.01
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Abstract

We investigated the electrical properties of copolymer low-k materials that are compromised of the PMSSQ(Poly Methyl Silsesquioxane)-based matrix with the BTMSE (Bis Tri Methoxy Silyl Ethane) additives. We manufactured MIS-type test samples using the copolymer as the insulator and measured their leakage current and failure time by means of the BTS (bias-temperature-stress) test. The failure time was observed to decrease drastically when the porosity of the copolymer was increased over $30\%$. From the measurement of failure time with respect to temperature. the activation energy of Cu drift through the copolymer was calculated to be 1.51 eV.

PMSSQ (Poly Methyl Silsesquioxane)-based matrix에 BTMSE (Bis Tri Methoxy Silyl Ethane) 를 첨가한 low-k물질의 전기적 특성을 조사하였다. 우리는 절연체로 copolymer를 사용하여 금속-절연체 -실리콘 구조를 만들고 BTS 실험을 통하여 누설 전류와 파괴 시간을 측정하였다. 코 폴리머의 기공이 $30\%$ 이상이 되었을 때, 파괴 시간이 급속하게 감소되어 진다. 온도에 관하여 파괴 시간으로부터 코 폴리머를 통한 구리 확산의 활성화 에너지는 1.51eV가 측정되었다.

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