Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Encapsulated Silicon Nanocrystals Formed in Silica by Ion Beam Synthesis

  • Choi, Han-Woo (Korean Institute of Geoscience and Mineral Resources) ;
  • Woo, Hyung-Joo (Korean Institute of Geoscience and Mineral Resources) ;
  • Kim, Joon-Kon (Korean Institute of Geoscience and Mineral Resources) ;
  • Kim, Gi-Dong (Korean Institute of Geoscience and Mineral Resources) ;
  • Hong, Wan-Hong (Korean Institute of Geoscience and Mineral Resources) ;
  • Ji, Young-Yong (Korean Institute of Geoscience and Mineral Resources)
  • Published : 2004.04.20
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Abstract

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in $SiO_2$ is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

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