Bulletin of the Korean Chemical Society

  • 제25권4호
  • /
  • Pages.480-484
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  • 2004
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor

  • Sung, Myung M. (Department of Chemistry, Kookmin University) ;
  • Kim, Chang G. (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Yun-Soo (Advanced Materials Division, Korea Research Institute of Chemical Technology)
  • 발행 : 2004.04.20
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초록

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

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피인용 문헌

  1. Chemical Vapor Deposition of β-LiGaO2 Films on Si(100) Using a Novel Single Precursor. vol.35, pp.30, 2004, https://doi.org/10.1002/chin.200430023
  2. Synthesis of New Donor-functionalized Alcohols as Organic Ligands for Metal Precursors of Metal Organic Chemical Vapor Deposition vol.26, pp.5, 2005, https://doi.org/10.5012/bkcs.2005.26.5.829