Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Atomic Layer Deposition of TiO2 Thin Films from Ti(OiPr)2(dmae)2 and H2O

  • Lee, Jae P. (Department of Chemistry, Kookmin University) ;
  • Park, Mi H. (Department of Chemistry, Kookmin University) ;
  • Chung, Taek-Mo (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim, Yun-Soo (Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Sung, Myung M. (Department of Chemistry, Kookmin University)
  • Published : 2004.04.20
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Abstract

$TiO_2$ thin films were grown on Si (100) substrates by atomic layer deposition using $[Ti(OPr^i )_2(dmae)_2]$ and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron pectroscopy, X-ray diffraction, and atomic force microscopy. The results show that $TiO_2$ ALD using $[Ti(OPr^i )_2(dmae)_2]$ as a precursor is self-controlled at temperatures of 100-300$^{\circ}C$. At the growth temperatures below 300$^{\circ}C$, the surface morphology of the $TiO_2$ films is smooth and uniform. The $TiO_2$ film was grown with a preferred orientation toward the [101] direction at 400$^{\circ}C$.

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