Journal of information and communication convergence engineering

  • 제2권3호
  • /
  • Pages.149-152
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  • 2004
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  • 2234-8255(pISSN)
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  • 2234-8883(eISSN)
한국정보통신학회 (The Korea Institute of Information and Commucation Engineering)
권호 표지

Dependence of Resonance Characteristics on Thermal Annealing in ZnO-Based FBAR Devices

  • 발행 : 2004.03.01
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초록

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

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참고문헌

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