대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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Si $p^+n$ 접합 다이오드의 온도를 고려한 유효 이온화 계수 모델링

Modeling for Temperature Dependent Effective ionization Coefficient of Si $p^+n$ Junction Diodes

  • 정용성 (서라벌대학 디지털전기정보학부)
  • Chung Yong Sung (School of Digital Electric & Information Technology, Sorabol College)
  • 발행 : 2004.01.01
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⟨ 이전 논문 다음 논문 ⟩

초록

본 논문에서는 Si의 유효 이온화 계수를 온도 함수로 추출하였고, 이 유효 이온화 계수를 이용하여 Si $p^+n$ 접합에서의 항복 전압을 위한 해석적 표현식을 온도 함수로 유도하였다. 100K 300K 및 500K일 경우, 해석적 항복 전압 결과는 $10^{14}cm^{-3}{\~} 10^{17}cm^{-3}$의 농도 범위에서 실험 결과 및 시뮬레이션 결과와 비교하여 오차 범위 $3\%$ 이내로 잘 일치하였다.

In this paper, temperature dependence of effective ionization coefficient in Si is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of Si $p^+n$ junction as a function of temperature. The analytical breakdown voltages agree well with the simulation as well as the experimental ones reported within $3\%$ in error for the doping concentrations in the range of $10^{14}cm^{-3}{\~} 10^{17}cm^{-3}$ at 100K, 300K and 500K.

키워드

참고문헌

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