Korean Journal of Crystallography (한국결정학회지)

Korean Crystallographic Association (한국결정학회)
권호 표지

Electrical Behavior of Ni/Ti and Au/Al Contact Metallization on GaN

Ni/Au와 Au/Al 전극 증착에 의한 GaN의 전기적 특성 연구

  • 이태근 (서울산업대학교 신소재공학과) ;
  • 최종운 (서울산업대학교 신소재공학과) ;
  • 허재근 (서울산업대학교 신소재공학과)
  • Published : 2003.06.01
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Abstract

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

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References

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