Korean Journal of Crystallography (한국결정학회지)

Korean Crystallographic Association (한국결정학회)
권호 표지

Distribution of Grown-in Defects in the Fast-pulled Czochralski-silicon Single Crystals

고속 인상 초크랄스키 실리콘 단결정에서 성장 결함 분포

  • Published : 2003.06.01
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Abstract

The fast pulling is easy to modify the distribution of grown-in defects toward fine size, which can be readily removed by additional treatment. In this experiment, The fast pulled crystals with high pulling late over 1.0 mm/min were grown and their grown-in defect distributions were investigated. In our recent developments in the growth of Cz-Si, it could be found that the cooling rate in a specific temperature range and the uniformity of temperature gradient at solid/liquid interface are more important for the formation of grown-in defect than the pulling rate itself. We analyzed these cooling rates and temperature gradients for the various fast pulled crystals and compared them to the observed formation behavior of the grown-in defects. The effective factor (Ω) for the void defect formation was introduced and it could explain the radial distribution of void defects in the fast-pulled crystals effectively.

고속인상은 후처리에 의하여 쉽게 제거될 수 있도록 성장 결함 분포를 작게 만들기 용이하다. 본 연구에서는, 1.0 mm/min 이상의 속도를 갖는 고속 인상 결정을 육성하였으며, 결정 내의 성장 결함 분포를 분석하였다. 최근의 Cz-Si 결정 성장에서 특정 온도구간에서의 냉각속도와 고액계면에서의 온도구배의 균일성 등이 성장 결함 형성에 대하여 인상속도보다 더 중요한 영향을 주는 것이 발견되었다. 따라서, 고속 인상 결정에서 냉각속도와 온도구배의 영향을 분석하였으며, 이를 실제 관찰된 결함 형성거동과 비교하였다. 이론적 고찰을 통하여 공동 결함 형성에 대한 유효인자(Ω)를 도출하였으며, 이로부터 공동 결함의 반경방향 분포 특성을 효과적으로 설명하였다.

Keywords

References

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