Transactions on Electrical and Electronic Materials

  • 제4권6호
  • /
  • Pages.9-12
  • /
  • 2003
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Experiment of Drifting Mobilities of Holes and Electrons in Stabilized a-Se Film

  • Kang, Sang-Sik (Department of Biomedical Engineering, College of Biomedical Science and Engineering, Inje University) ;
  • Park, Ji-Koon (Department of Biomedical Engineering, College of Biomedical Science and Engineering, Inje University) ;
  • Park, Jang-Yong (Department of Biomedical Engineering, College of Biomedical Science and Engineering, Inje University) ;
  • Kim, Jae-Hyung (Medical Imaging Research Center, Inje University) ;
  • Nam, Sang-Hee (Medical Imaging Research Center, Inje University)
  • 발행 : 2003.12.01
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초록

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

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참고문헌

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