Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Torsion of Hypothetical Single-Wall Silicon Nanotubes

가상의 단일벽 실리콘 나노튜브의 비틀림

  • 변기량 (중앙대학교 전자전기공학부) ;
  • 강정원 (중앙대학교 전자전기공학부) ;
  • 이준하 (상명대학교 컴퓨터 정보통신공학부) ;
  • 권오근 (세명대학교 인터넷 정보학부) ;
  • 황호정 (중앙대학교 전자전기공학부)
  • Published : 2003.12.01
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Abstract

The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubcs corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics o silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

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