References
- R. Neale, D. Nelson, and Gordon Moore, 'Nonvolatile and reprogrammable, the read mostly memory is here', , p. 56, 1970
- Hong Bay Chung and Chang Yub Park, 'Electhcal characteristics of the thin film interface of amorphous chalcogenide semiconductor', J. of KIEE. Vol. 29, p. Ill, 1979
- Hong Bay Chung, Transition characteristics of ON OFF state of amorphous chalcogenide semiconductor, J. of KIT., Vol. 9, p. 59, 1980
-
N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, 'Rapid phase transitions of GeTe-
$Sb_{2}Te_{3}$ pseudo binary amorphous thin films for an optical disk memory', J. App. Phys., Vol. 69, No. 5, p. 2849, 1991 https://doi.org/10.1063/1.348620 - G. Wicker, 'Nonvolatile, high density, high performance phase change memory', SPIE, Vol. 3891, p. 2, 1999 https://doi.org/10.1117/12.364449
- G. Wicker, 'A comprehensive model of submicron chalcogenide switching devices', Ph.D. Dissertation, Wayne State University, Detroit, MI 1996
- Scott Tyson, Steve Hudgens, Boil Pashmakov, and Wally Czubatyj, 'Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements', IEEE Transactions on nuclear sciences, Vol. 47, No. 6, p. 2528, 2000 https://doi.org/10.1109/23.903803
- Stefan Lai and Tyler Lowrey, 'OUM A 180nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications', Intel Corporation, RN3-01
- Young Jong Lee, 'Phase change characteristics of Te chalcogenide thin film', Kwangwoon Univ. Ph. DThesisJune, 1990
-
Jong-Hwa Park, Jung-Il Park, Eun-Su K-im, and Hong-Bay Chung, 'Holographic grating formation by wet etching of amorphous
$As_{40}Ge_{10}Se_{15}S_{35}$ thin film', Jpn. J. Appl. Phys., Vol. 41, p. 4271. 2002 https://doi.org/10.1143/JJAP.41.4271 - Hong-Bay Chung, Sook Im, and Young-Jong Lee, 'The optical properties of Te-Ge-Sb thin films witt crystallization', Proc. 1996 Autumn Conf KIEEME, p. 144, 1996
- Sung-Jun Yang, Kyung Shin, Jung-Il Park, Ki-Nam Lee, and Hong-Bay Chung, 'The study of phase change according ot temperature and voltage ir chalcogenide thin film', Proc. 2003 Summer Conf KIEEME, p. 417, 2003
- S. R. Elliott 'Physics of Amorphous Materials' Longman Scientific & Technical, p. 30. 1990
-
Byeong-Seok Yi, Hyun-Yong Lee, and Hong-Bay Chung, 'Electhcal and Memory switching characteristics of amorphous
$As_{10}Ge_{15}Te_{75}$ thin films', 1996 Autumn Conf. p. 235, 1996