Abstract
A current-voltage relation for Positive Temperature Coefficient of Resistance (PTCR) ceramic was derived and compared with the experimental data. The new current-voltage relation was developed based on Heywangs double Schottky barrier model and a bias distribution across the grain boundary. The voltage limitation V < 4${\Phi}$$\sub$b/ suggested by Heywang is no longer necessary in the new expression for the voltage dependence of the resistance. The pulsed voltages were applied to the PTCR ceramic specimen in order to avoid possible temperature variation during the measurement.