Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 16 Issue 9
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- Pages.64.1-64
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- 2003
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer
- Noda, Minoru (Department of Physical Science, Graduate School of Engineering Science, Osaka University) ;
- Kodama, Kazushi (Department of Physical Science, Graduate School of Engineering Science, Osaka University) ;
- Kitai, Satoshi (Department of Physical Science, Graduate School of Engineering Science, Osaka University) ;
- Takahashi, Mitsue (Department of Physical Science, Graduate School of Engineering Science, Osaka University) ;
- Kanashima, Takeshi (Department of Physical Science, Graduate School of Engineering Science, Osaka University) ;
- Okuyama, Masanori (Department of Physical Science, Graduate School of Engineering Science, Osaka University)
- Published : 2003.09.01
Abstract
A metal-ferroelectric [SrBi
Keywords