Laser Solutions (한국레이저가공학회지)
- Volume 6 Issue 2
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- Pages.9-17
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- 2003
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- 1229-0963(pISSN)
An Optical Study on ELC Process of Amorphous Silicon
비정질 실리콘의 ELC 공정에 대한 광학적 연구
Abstract
Due to the heat confinement in the shallow region of the target for a short time scale, pulsed laser annealing has received an increasing interest for the fabrication of poly-Si thin film transistors(TFTs) on glass as a low cost substrate in the flat panel displays. The formation and growth mechanisms of poly silicon(poly-Si) grains in thin films are investigated using an excimer laser crystallization system. To understand the crystallization mechanism, the grain formations are observed by FESEM photography. The optical reflectance and transmittance during the crystallization process are measured using HeNe laser optics. A two-step ELC(Excimer Laser Crystallization) process is applied to enhance the grain formation uniformity.