한국통신학회논문지 (The Journal of Korean Institute of Communications and Information Sciences)

  • 제28권8A호
  • /
  • Pages.650-656
  • /
  • 2003
  • /
  • 1226-4717(pISSN)
  • /
  • 2287-3880(eISSN)
한국통신학회 (The Korean Institute of Commucations and Information Sciences)
권호 표지

VBIC Model Application and Parameter Extraction and Optimization for SiGe HBT

  • Lee, Sang-Heung (SiGe Device Team, Electronics and Telecommunication Research Institute) ;
  • Park, Chan-Woo (Basic Research Division, Electronics and Telecommunication Research Institute) ;
  • Lee, Seung-Yun (SiGe Device Team, Electronics and Telecommunication Research Institute) ;
  • Lee, Ja-Yol (SiGe Device Team, Electronics and Telecommunication Research Institute) ;
  • Kang, Jin-Yeong (SiGe Device Team, Electronics and Telecommunication Research Institute)
  • 발행 : 2003.08.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In 1995, a group of representatives from the integrated circuits and computer-aided design industries presented a industry standard bipolar model called the VBIC model. The VBIC model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating which are not available in the conventional SGP model. This paper applies VBIC model for SiGe HBT device and develops an accurate and efficient methodology to extract all the DC and AC parameters of the VBIC model for SiGe HBT device at room temperature. Simulated results by the extracted VBIC model parameter are compared with the measurement data and show very good agreement in both DC and s-parameters prediction.

키워드

참고문헌

  1. Journal of Materials Science: Materials in Electronics v.12 no.8 The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors S.Y.Lee;H.S.Kim;S.H.Lee;K.H.Shim;J.Y.Kang;M.K.Song
  2. Bell System Tech. J. v.49 An integrated charge-control model of bipolar transistors H.K.Gummel;H.C.Poon
  3. Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting VBIC95: An imroved vertical, IC bipolar transistor model C.C.McAndrew;J.A.Seitchik;D.F.Bowers;M.Dunn;M.Foisy;I.Getru;M.McSwain;S.Moinian;J.Parker;P. van Wihnen;L.F.Wagner
  4. IEEE Circuits and Devices Magazine v.12 VBIC95: An improved bipolar transistor molel F.Najm
  5. UTMOST(universal Transistor MOdeling SofTware) Ⅲ SILVACO International
  6. Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting SPICE Early modeling C.C.McAndrew;L.W.Nagel
  7. International Conference on Advanced Semiconductor Devices and Microsystems Parameter extraction and optimization for new industry atand VBIC model X.Cao;J.McMacken;P.Layman;J.J.Liou;A.Sun;S.Moinian