참고문헌
- 전기전자재료학회논문지 v.10 no.1 초고주파 응용을 위한 Si/SiGe 이종 접합 쌍극자 트렌지스터 기술 동향 김남영;형창희
- 한국전기전자재료학회 1996년추계학술대회 논문집 상압 화학 기상 증착기를 이용한 고출력 SiGe HBT 제작 이수민;조덕호;한태현;염병렬
- 한국전기전자재료학회 2002년추계 학술대회논문집 Si-Ge-H-Cl 계를 이용한 자기정렬 HBT 용 Si 및 SiGe의 선택적 에피성장 김상훈;심규환;강진영
- Applied Surface Science v.100 no.101 Selective epitaxial Si based layer and TiSi₂deposition by integrated chemical vapor deposition J.L.Regolini;J.Margail;S.Bodner;D.Maury;C.Morin https://doi.org/10.1016/0169-4332(96)00340-6
- Appl. Phys. Lett. v.58 no.19 Low temperature selective epitaxy by ultra high vacuum chemical vapor deposition from SiH₄and GeH₄/H₂ M.Racanelli;D.W.Greve https://doi.org/10.1063/1.104998
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Applied Surface Science
v.100
no.101
Electrical properties of
$metal/Si_{1-x}Ge_{x}/Si(100)$ hetero junctions H.Shinoda;M.Kosaka;J.Kojima;S.Zaima;H.Ikeda https://doi.org/10.1016/0169-4332(96)00333-9 - J. Appl. Phys. v.74 no.9 Pattern sensitivity of selective chemical vapor deposition : pressure dependence T.I.Kamins https://doi.org/10.1063/1.354200
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Appl. Phys. Lett.
v.47
no.3
Calculation of critical layer thickness versus lattice mismatch for
$Ge_{x}Si_{1-x}/Si$ strained layer hetero-structure R.People;J.C.Bean https://doi.org/10.1063/1.96206 -
Appl. Phys. Lett.
v.61
no.6
Kinetics of selective epitaxial deposition of
$Si_{1-x}Ge_{x}$ T.I.Kamins;D.W.Vook;P.K.Yu;J.E.Turner https://doi.org/10.1063/1.107817