대한전자공학회논문지SD (Journal of the Institute of Electronics Engineers of Korea SD)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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저전압 DRAMs을 위한 2-단계 2-위상 VPP 전하 펌프 발생기

A Two-Stage Two-Phase Boosted Voltage Generator for Low-Voltage DRAMs

  • 발행 : 2003.06.01
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초록

본 논문에서는 몸체효과와 문턱전압 손실이 제거된 새로운 2-단계 2-위상 VPP 전하펌프 발생기를 제안하였다. 새롭게 제안된 회로의 동작을 검증하기 위하여 0.18um Triple-Well CMOS 공정을 사용하였으며, VPP의 전압 레벨은 VDD가 문턱전압 이상일 때 3VDD가 공급되는 결과를 얻었다.

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18um triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

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참고문헌

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  2. Y. H. Kim et al., 'Two-Phase Boosted Voltage Generator for Low-Voltage Giga-bit DRAMs,' IEICE Transactions on Electron., vol.E83-C, pp. 266-269, Feb. 2000
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  4. J. T. Wu and K. L. Chang, 'MOS charge pump for low-voltage operation,' IEEE J. Solid-State Circuits, vol. 33, pp. 592-597, Apr. 1998 https://doi.org/10.1109/4.663564