Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Growth and characterization of the high quality ZnTe epilayers for opto-electronic devices

광전소자를 위한 고품질 ZnTe 단결정 박막의 성장과 특성

  • 정양준 (목포대학교 물리학과) ;
  • 김대중 (목원대학교 자연과학연구소) ;
  • 유영문 (목원대학교 자연과학연구소) ;
  • 최용대 (목원대학교 광전자물리학과)
  • Published : 2003.06.01
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Abstract

High quality zincblende ZnTe(100) epilayers have been grown on semi-insulating $CaAs(100\pm2^{\circ})$substrate by hot-wall epitaxy. To grow high quality ZnTe epilayers, the growth temperature dependence of the surface topography, the growth rate, and the crystalline properties were investigated. From the photoluminescence measured at 10 K, the light hole and heavy hole free exciton emissions splitted by thermal tensile strain were observed and their first excited state emissions were also measured. The low temperature doublet of the heavy hole free exciton is because of the energy separation between longitudinal exciton and transverse exciton due to exciton-polariton coupling.

Zincblende 구조를 갖는 양질의 ZnTe(100) 박막을 $CaAs(100\pm2^{\circ})$ 기판에 HWE법으로 성장하였다 기판온도에 따른 표면상태와 성장률 그리고 결정성의 변화를 관측하였고, 기판온도가 $470^{\circ}C$일 때 결정성이 가장 우수하였다. 10K 광발광 측정으로부터 열적 인장스트레인에 의하여 분리된 가벼운 양공과 무거운 양공을 관측하였고 이들의 일차 들뜬상태를 관측하였다 무거운 양공의 자유 엑시톤의 이중구조는 엑시톤-폴라리톤 결합에 의한 세로방향 엑시톤과 가로방향 엑시톤 사이의 에너지 차이 때문이다.

Keywords

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