한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제16권6호
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  • Pages.465-470
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  • 2003
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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탈이온수로 희석된 실리카 슬러리에 알루미나 연마제가 첨가된 혼합 연마제 슬러리의 CMP 특성

Chemical Mechanical Polishing Characteristics of Mixed Abrasive Slurry by Adding of Alumina Abrasive in Diluted Silica Slurry

  • 발행 : 2003.06.01
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초록

The chemical mechanical polishing (CMP) process has been widely used for the global planarization of multi-layer structures in semiconductor manufacturing. The CMP process can be optimized by several parameters such as equipment, consumables (pad, backing film and slurry), process variables and post-CMP cleaning. However, the COO(cost of ownership) is very high, because of high consumable cost. Especially, among the consumables, the slurry dominates more than 40 %. In this paper, we have studied the CMP characteristics of diluted silica slurry by adding of raw alumina abrasives and annealed alumina abrasives. As an experimental result, we obtained the comparable slurry characteristics compared with original silica slurry in the view-point of high removal rate and low non-uniformity. Therefore, we can reduce the cost of consumables(COC) of CMP process for ULSI applications.

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참고문헌

  1. 전기전자재료학회논문지 v.13 no.10 탈 이온수 압력과 정제된 N₂가스가 ILD-CMP 공정에 미치는 영향 김상용;이우선;서용진;김창일;장의구;박진성
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  3. J. Materials Science : Materials in Electronics v.12 no.9 Optimization of pre-metal dielectric (PMD) materials Y.J.Seo;S.Y.Kim;W.S.Lee https://doi.org/10.1023/A:1012461728470
  4. 전기전자재료학회 논문지 v.11 no.12 Chemical Mechanical Polishing(CMP) 공정을 이용한 Multilevel Metal 구조의 광역 평탄화에 관한 연구 김상용;서용진;김태형;이우선;김창일;장의구
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