Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Dielectric Properties of Zr-doped (Ba,Sr,Ca)TiO3 Thick Films for Microwave Phase Shifters

  • Lee, Sung-Gap (Department of Electric and Electronics Engineering, Seonam University) ;
  • Lee, Sang-Heon (Department of electronics Information and Communication Engineering, Sunmoon University)
  • Published : 2003.04.01
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Abstract

(Ba,Sr,Ca)TiO$_3$ powders, prepared by the sol-gel method, were mixed with organic binder and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. All the BSCT thick films, sintered at 1420$^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The average grain sizes decreased with increasing amounts of ZrO$_2$, and the BSCT(40/40/20) thick films doped with 2wt% MnO$_2$ showed a value of 8$\mu\textrm{m}$. The thickness of thick films by four-cycle on printing/drying was approximately 951$\mu\textrm{m}$. The relative dielectric constant decreased with increasing Ca content and MnO$_2$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 2.0wt% ZrO$_2$ were 772, 0.184％ and 15.62%, respectively.

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References

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