참고문헌
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Appl. phys. lett.
v.74
$(Ba,Sr)TiO_3$ thin films with conducting perovskite electrodes for dynamic random access memory applications B. Nagaraj;T. Swahney;S. Perusse;S. Aggarwal;V. S. Kaushik;S. Zafar;R. E. Jones https://doi.org/10.1063/1.124104 - 전기전자재료학회지 v.9 no.4 ULSI DRAM의 capacitor 절연막용 BST(barium strontium titanate)박막의 제작과 특성에 관한 연구 류정선;강성준;윤영섭
- Mat. Res. Bull. v.21 High-permittivity perovskite thin films for dynamic random access memories A. I. Kingon;S. K. Streiffer;C. Basceri;S. R. Summerfelt
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J. Vac. Sci. Technol.
v.B19
no.1
Electrical characteristics of
$(Pb,Sr)TiO_3$ thin films for ultra-large-scale-integrated dynamic radom access memory capacitors prepared by liquid-source misted chemical deposition H. J. Chung;S. I. Woo -
전기전자재료학회지
v.9
no.10
Sol - Gel법에 의한
$PbZrO_3$ -$PbTiO_3$ -$Pb(Ni_{1/3}Nb_{2/3})O_{3}$ 박막의 물리적 특성 김성일;유영각;임무열;구경완 - Materials Letters v.56 Synthesis and characterization of lead strontium titanate thin films by sol-gel tehnique S. B. Majumder;M. Jain;R. Guo;A. S. Bhalla;R. S. Katiyar https://doi.org/10.1016/S0167-577X(02)00597-9
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Thin Solid Film
v.364
The effect of post-annealing on the electrical properties of
$(Pb,Sr)TiO_3$ thin films prepared by liquid source misted chemical deposition for ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitor H. J. Chung;S. J. Chung;J. H. Kim;S. I. Woo https://doi.org/10.1016/S0040-6090(99)00933-5 -
Mat. Res. Bull.
v.36
Characteristics of
$(Pb_{1-x}Sr_x)TiO_3$ thin film prepared by a chemical solution processing D. H. Kang;J. H. Kim;J. H. Park;K. H. Yoon https://doi.org/10.1016/S0025-5408(01)00511-6 - Handbook of X-ray Photoelectron Spectroscopy J. Chastain
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전기전자재료학회지
v.15
no.4
강유전체
$YMnO_3$ 박막 시각에 대한$CF_4$ 첨가효과 박재화;김경태;김창일;장의구;이철인 https://doi.org/10.4313/JKEM.2002.15.4.314