참고문헌
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Integration Aspects and Electrical Properties of
$SrBi_2Ta_2O_9$ for Non-volatile Memory Applications D. J. Taylor;R. E. Jones;Y. T. Lii;P. Zurcher;P. Y. Chu;S. J. Gillespie - Nature v.374 Fatigue-free Ferroelectric Capacitors with Platinum Electrodes C. A. Paz de Araujo;J. D. Cuchiaro;L. D. McMillan;M. C. Scott;J. F. Scott https://doi.org/10.1038/374627a0
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Intergrated Ferroelectrics
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New Low Temperature Processing of Sol-gel
$SrBi_2Ta_2O_9$ Thin Films Y. Ito;M. Ushikubo;S. Yokoyama;H. Matsumaga https://doi.org/10.1080/10584589708019984 -
J. Kor. Ceram. Soc.
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Dielectric and Electrical Properties of
$Sr_{0.9}Bi_{2.1}Ta_2O_9$ Thin Films on$IrO_2$ Electrode B. M. Park;S. P. Song;B. J. Jeong;B. H. Kim -
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Preparation and Basix Properties of
$SrBi_2Ta_2O_9$ Films Y. Oishi;Y. Matsumuro;M. Okuyama - Intergrated Ferroelectrics v.15 A Critical Comparative Review of PZT and SBT-based Science and Technology for Non-volatile Ferroelectric Memories O. Auciello https://doi.org/10.1080/10584589708015712
- J. of Mater. Sci. v.10 Direct Fine-patterning of PZT Thin Films Using Photosensitive Gel Films Derived from Chemically Modified Metal-alkoxides N. Tohge;Y. Takama
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A Study on Fabrication of Photosensitive
$Sr_{0.9}Bi_{2.1}Ta_2O_9$ Thin Film by Sol-gel Self-patterning Technique K. H. Yang;Y. H. Park;T. Y. Lim;K. H. Auh;B. H. Kim https://doi.org/10.4191/KCERS.2002.39.8.750 -
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Preparation and Properties of
$SrBi_2Ta_2O_9$ Ferroelectric Thin Films Using Excimer UV Irradiation and Seed Layer T. Hayashi;D. Togawa https://doi.org/10.1143/JJAP.40.5585 -
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Novel Chemical Processing for Crystallization of
$SrBi_2Ta_2O_9$ Thin Films via UV Irradiation K. Nichizawa;T. Miki;K. Suzuki;K. Kato https://doi.org/10.1016/S0167-577X(01)00358-5 - J. Chem. Soc. v.83 Metal β-diketone Complexes. Part 1. Metal-carbon Bonding in Some Platinum Acetylacetonates J. Lewis;R. F. Long;C. Oldham https://doi.org/10.1021/ja01466a014
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J. Jpn. Ceram. Soc.
v.97
Preparation of Amorphous
$Al_2O_3$ Thin Films from Stabilized Al-alkoxides by the Sol-gel Method H. Uchihashi;N. Tohge;T. Minami https://doi.org/10.2109/jcersj.97.396