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Effects of Synthetic Temperature and Suspension Stability of CeO2 Abrasive on CMP Characteristics

CeO2 연마입자의 합성온도와 수계안정성이 CMP 특성에 미치는 영향

  • 임건자 (한국과학기술연구원 나노재료연구센터) ;
  • 김태은 (한국과학기술연구원 나노재료연구센터) ;
  • 이종호 (한국과학기술연구원 나노재료연구센터) ;
  • 김주선 (한국과학기술연구원 나노재료연구센터) ;
  • 이해원 (한국과학기술연구원 나노재료연구센터) ;
  • 현상훈 (연세대학교 세리믹공학과)
  • Published : 2003.02.01

Abstract

CMP(Chemical Mechanical Planarization) slurry for STI process is made by mechanically synthesized$CeO_2$as abrasive. The abrasive can be stabilized by electrostatic or steric stabilization in aqueous slurry and steric stabilization is more effective for long-term stability. Blanket-type$SiO_2$and $Si_3N_4$ wafers are polished with CMP slurry containing$CeO_2$synthesized in 50$0^{\circ}C$ or $700^{\circ}C$. Removal rate and surface uniformity of$SiO_2$and$Si_3N_4$wafer and selectivity are influenced by synthetic condition of abrasive, suspension stability and pH of slurries.

기계적 방법으로 합성된 CeO$_2$분말을 연마입자로 하여 STI용 CMP 슬러리를 제조하였다. 연마입자는 정전기적 방법과 입체적 방법으로 수계에서 안정화시킬 수 있었으며, 장기 안정성을 위해서는 입체적 방법에 의한 안정화가 유효하였다. 50$0^{\circ}C$$700^{\circ}C$에서 합성된 CeO$_2$를 이용하여 CMP 슬러리를 제조하고, SiO$_2$와 Si$_3$N$_4$가 블랭킷 형태로 증착된 웨이퍼를 연마한 결과 연마능률과 선택비는 연마입자의 합성조건과 분산 안정성, 슬러리의 pH 등에 의해 영향을 받았다.

Keywords

References

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