한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제16권2호
  • /
  • Pages.97-101
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  • 2003
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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구리 확산에 대한 Pt/Ti 및 Ni/Ti 확산 방지막 특성에 관한 연구

A Study on the Diffusion Barrier Properties of Pt/Ti and Ni/Ti for Cu Metallization

  • 장성근 (청운대학교 전자공학과)
  • 발행 : 2003.02.01
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초록

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

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참고문헌

  1. IEDM Tech. Dig. Full Copper Wiring in a sub-0.25㎛ CMOS ULSI Technology D. Edelstein;J. Heidenreich;R. Goldblatt;W. Cote;C. Uzoh;N. Lustig;P. Roper;T. McDevitt;A. Simon;J. Dukovic;R. Wachnik;H. Rathore;R. Schulz;L. Su;S. Luce;J. Slattery
  2. Symp. on VLSI Tech. Dig. Copper contamination Induced Degradation of MOSFET Charateristics and Reliability M. Inohara;H. Sakurai;T. Yamaguchi;H. Tomita;T. Iijima;H. Oyamatsu;T. Nakayama;Y. Toyoshima
  3. 전기전자재료학회논문지 v.12 no.8 Cu와 Si 사이에서 확산 방지막으로 사용하기위한 TiN/Zr(N)/TiN 다층박막의 연구 김창조;조병철;김좌연;윤의중;이재갑
  4. 전기전자재료학회논문지 v.7 no.1 $N_2O$가스로 재산화시킨 oxynitride막의 특성 김태형;김창일;최동진;장의구
  5. 전기전자재료학회논문지 v.6 no.3 $N_2O$가스로 열산화된 게이트 산화막의 특성 이철인;최현식;서용진;김창일;김태형;장의구
  6. IEEE Interconnect Technology Conference MOCVD TiN diffusion barrier for copper interconnection H. S. Choe;M. Danek
  7. IEEE Interconnect Technology Conference CVD $T_aN$ barrier for copper metallization and DRAM bottom electrode A. Paranjpe;R. Bubber;L. Velo;G. Shang;S. Gopinath;J. Dalton;M. Moslehi
  8. IEEE Electron Device v.ED-31 no.1 A reliable approach to chargepumping measurements in MOS transistors G. Groeseneken;H. E. Maes;N. Beltran;R. F. Dekeersmaec-Ker