참고문헌
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Appl. Phys. Lett.
v.71
Observation of multiple
$Er^{+3}$ sites in Er-implanted GaN by site-selective photo luminescence excitation spectroscopy S. Kim;S. J. Rhee;D. A. Turnbull;E. E. Reuter;X. Li;J. J. Coleman;S. G. Bishop https://doi.org/10.1063/1.119507 -
Appl. Phys. Lett.
v.71
Trap mediated excitation of
$Er^{+3}$ photoluminescence in Er-implanted GaN S. Kim;S. J. Rhee;X. Li;J. J. Coleman;S. G. Bishop https://doi.org/10.1063/1.120171 - Mater. Res. Soc. Symp. Proc. v.512 Site-selective photoluminescence spectroscopy of Er-implanted wurtzite GaN under various annealing conditions S. Kim;S. J. Rhee;X. Li;J. J. Coleman;S. G. Bishop
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J. Electron. Mater.
v.27
Excitation mechanisms of multiple
$Er^{+3}$ sites in Er-implanted GaN S. Kim;S. J. Rhee;X. Li;J. J. Coleman;S. G. Bishop https://doi.org/10.1007/s11664-998-0395-6 - Appl. Phys. Lett. v.71 Photoluminescence spectroscopy of erbium implanted gallium nitride M. Thaik;U. Hommerich;R. N. Schwartz;R. G. Wilson;J. M. Zavada https://doi.org/10.1063/1.120165
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Appl. Phys. Lett
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Direct and indirect excitation of
$Er^{+3}$ ions in Er: AIN X. Wu;U. Hommerich;J. D. Mackenzie;C. R. Abernathy;S. J. Pearton;R. N. Schwartz;R. G. Wilson;J. M. Zavada https://doi.org/10.1063/1.118951 - Appl. Phys. Lett. v.72 Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er D. M. Hansen;R. Zhang;N. R. Perkins;S. Safvi;L. Zhang;K. L. Bray;T. F. Kuech https://doi.org/10.1063/1.121034
- 전기전자재료 v.13 no.1 GaN 박막 및 소자의 연구동향 : GaN:Er의 적외선 발광 김상식
- Trans. on EEM v.1 no.1 Site-selectifve photoluminescence spectroscopy of er-implanted wurtzite GaN under various annealing condition Sangsig Kim;Man Young Sung;Jinki Hong
- Trans. on EEM v.1 no.3 Temperature - dependent photoluminescence from Er-implanted undoped and Mg-doped GaN Sangsig Kim;Man Young Sung;Jinki Hong
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- Electronic Processes in Non-Crystalline Materials N. F. Mott;E. A. Davis
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