Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Al2O3 Nano-Coating by Atomic Layer Deposition

  • Min Byung-Don (Department of Electrical Engineering, Korea University) ;
  • Lee Jong-Soo (Department of Electrical Engineering, Korea University) ;
  • Kim Sang-Sig (Department of Electrical Engineering, Korea University)
  • Published : 2003.06.01
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Abstract

Aluminum oxide ($Al_2O_3$) materials were coated conformally on ZnO nanorods by atomic layer deposition (ALD). The ZnO nanorods were first synthesized on a Si(100) substrate from ball-milled ZnO powders by a thermal evaporation procedure. $Al_2O_3$ films were then deposited on these ZnO nanorods by ALD at a substrate temperature of $300^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) images of the deposited ZnO nanorods revealed that amorphous $Al_2O_3$ cylindrical shells surround the ZnO nanorods. These TEM images illustrate that ALD has an excellent capability to coat any shape of nanorods conformally.

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References

  1. S. Iijima, 'Helical micro tubules of graphitic carbon', Nature, Vol. 354, p. 56, 1991 https://doi.org/10.1038/354056a0
  2. B. C. Kim, K. T. Sun, K. S. Park, K. J. Im, T. Noh, M. Y. Sung, S, Nahm, Y. N. Choi, S. S. Park, and S.Kim, 'B Ga203 nanowires synthesizedfrom milled GaN powders', Appl. Phys. Lett., Vol. 80, No.3, p. 479,2002 https://doi.org/10.1063/1.1435073
  3. Z. W. Pan, Z. R. Dai, and Z. L. Wang, 'Nanobelts of semiconducting oxides', Science, Vol. 291, No. 5510,p.1947,2001 https://doi.org/10.1126/science.1058120
  4. J. s. Lee, K. Park, S. Nahm, S. Kim, and S. Kim,'Ga203 nanomaterials synthesized from ball milled GaN powders', J. Crys. Growth, Vol. 244, No. 3-4, p. 287, 2002 https://doi.org/10.1016/S0022-0248(02)01656-1
  5. H. Z. Zhang, Y. C. Kong, Y. Z. Wang, X. Du, Z. G. Bai, J. J. Wang, D. P. Yu, Y. Ding, and S. Q. Feng,'Ga203 nanowires prepared by physical evaporation', Solid State Commun., Vol. 109, No.11, p. 677,1999 https://doi.org/10.1016/S0038-1098(99)00015-0
  6. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, 'Catalytic growth of zinc oxide nanowires by vapor transport', Adv. Mater., Vol. 13 No.2, p. 113,2001 https://doi.org/10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO;2-H
  7. A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, 'AIO3 thin film growth on Si(100) using binary reaction sequence chemistry', Thin Solid Films, Vol. 292, No. 1-2, p. 135, 1997 https://doi.org/10.1016/S0040-6090(96)08934-1
  8. B. Lux, C. Colombier, and H. Altena, 'Preparation of alumina coatings by chemical vapour deposition' Thin Solid Films, Vol. 138, No.1, p. 49,1986 https://doi.org/10.1016/0040-6090(86)90214-2
  9. Y. Kim, S. M. Lee, C. S. Park, S, I, Lee, and M. Y. Lee, 'Substrate dependence on the optical properties of AI2O3 films grown by atomic layer deposition', Appl. Phys. Lett., Vol. 71, No. 25, p. 3604,1997 https://doi.org/10.1063/1.120454
  10. W. S. Jeon, S. Yang., C. S. Lee, and S. W. Kang,'Atomic layer deposition of AI2O3 thin films using trimethylaluminum and isopropyl alcohol', J. Electrochem. Soc., Vol. 149, No.6, p. C306, 2002 https://doi.org/10.1149/1.1470659
  11. A. Paranjpe, S. Gopinath, T. Omstead, and R. Bubber, 'Atomic layer deposition of AIOx for thin film head gap applications', J. Electrochem. Soc., Vol. 148, No.9, p. G465, 2001 https://doi.org/10.1149/1.1385822
  12. Y. J. Lee and S. W. Kang, 'Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma', Electrochem. Solid State Lett., Vol. 5, No. 10, p. C91,2002 https://doi.org/10.1149/1.1503204
  13. J. W. Elam, Z. A. Sechrist, and S. M. George, 'ZnO/AI2O3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements', Thin Solid Films, Vol. 414, No.1, p. 43, 2002 https://doi.org/10.1016/S0040-6090(02)00427-3