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Study on the Characteristics of Organic TFT Using Organic Insulating Layer Efficiency

유기 절연층에 따른 유기 TFT 특성 연구

  • Pyo, Sang-Woo (Department of Electrical Information and Control Engineering, Hongik University) ;
  • Lee, Min-Woo (Department of Chemical Engineering, Hongik University) ;
  • Sohn, Byung-Chung (Department of Chemical Engineering, Hongik University) ;
  • Kim, Young-Kwan (Department of Science, Hongik University)
  • 표상우 (홍익대학교 전기정보제어공학과) ;
  • 이민우 (홍익대학교 화학공학과) ;
  • 손병천 (홍익대학교 화학공학과) ;
  • 김영관 (홍익대학교 기초과학과)
  • Published : 2002.12.31

Abstract

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

Keywords

References

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