한국재료학회지 (Korean Journal of Materials Research)

  • 제12권11호
  • /
  • Pages.889-893
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  • 2002
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  • 1225-0562(pISSN)
  • /
  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
권호 표지
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Cu/Ti/SiO2/Si 구조에서 Ti 층 두께가 Ti 반응에 미치는 효과

Effects of Ti Thickness on Ti Reactions in Cu/Ti/SiO2/Si System upon Annealing

  • 홍성진 (국민대학교 신소재공학부) ;
  • 이재갑 (국민대학교 신소재공학부)
  • Hong, Sung-Jin (School of Advanced Materials Engineering.Kookmin University) ;
  • Lee, Jae-Gab (School of Advanced Materials Engineering.Kookmin University)
  • 발행 : 2002.11.01
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초록

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

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