참고문헌
- 전기전자재료학회논문지 v.11 no.10 Electrical characteristics and leakage current mechanism of high temperature poly-si thin film transistors 이현중;이경택;박세근;박우상;김형준
- IEEE Transactions on Electron Devices v.36 no.12 High performance TFT's fabricated by XeCl excimer laser annealing of hydrogenated amorphous silicon film Kenji Sera;Fujio Okumura;Hiriyuki Uchida;Shinji Itoh https://doi.org/10.1109/16.40970
- MRS Bulletin Crystalline si films for integrated activematrix liquid crystal display James S. Im;Robert S. Sposili
- Appl. Phys. Lett. v.69 no.19 Sequential lateral solidification of thin films on SiO₂ James S. Im;Robert S. Sposili
- IEEE Electron Device Lett. v.19 no.8 Low temperature single crystal Si TFT's fabricated on Si films processed via sequential lateral solidification M. A. Crowder;P. G. Carey;P. M. Smith;Robert S. Sposili;Hans S. Cho;James S. Im https://doi.org/10.1109/55.704408
- KIEE Annual Autumn Conference 단결정 실리콘 TFT 제작을 위한SLS 공정 이윤재;박정호
- 전기전자재료학회논문지 v.11 no.7 Characteristics of polysilicon thin film transistor with LDD structure 황한욱;황성수;김용상
- 대한전기학회 하계학술대회 산학협동위원회 특별session SLS를 이용한 poly-Si TFT 제작과 채널길이 변화에 따른 소자의 특성분석 고영운;이윤재;김동환;박정호
- Proc. MRS Symp. v.621 Y. H. Jung;J. M. Yoon;M. S. Yang;W. K. Park
- IEE. IRPS New applications of focused ion beam technique to failure analysis and process monitoring of VLSI K. Nikawa;K. Nasu;M. Murase
- 전기전자재료학회논문지 v.9 no.10 A study on the off-current mechanism of poly-Si thin film transistors fabricated at low temperature 진교원;김진;이진민;김동진
- Silicon Process v.2 S. Wolf
- Nuclear Instruments and Methods in Physics Research v.121 Metal contacts on shallow junctions L. J. Chen;S. L. Vheng;B. Y. Tsui https://doi.org/10.1016/S0168-583X(96)00582-4
- IEEE International Symposium on Semiconductor Manufacturing Conference Etch damage removal process without Si substrate loss employing hydrogen plasma after treatment Sumio Sekiuyama;Shunji Hayashi;Kenya Iwasaki
- J. Materials science: Materials in Electronics v.9 no.2 Effect of reactive ion etching and post etching annealing on the electrical characteristics of indium-tin oxide/silicon junction Bi-Shiou Chiou;King Long https://doi.org/10.1023/A:1008869724623