한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제15권10호
  • /
  • Pages.883-888
  • /
  • 2002
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

CVD 절연막을 이용한 3C-SiC 기판의 초기직접접합에 관한 연구

A Study on Pre-bonding of 3C-SiC Wafers using CVD Oxide

  • 정귀상 (동서대학교 정보시스템공학부) ;
  • 정연식 (동서대학교 정보시스템공학부) ;
  • ;
  • ;
  • Shigehiro Nishino (Dept. of Electro,& Infor. Sci., Kyoto Institute of Technology)
  • 발행 : 2002.10.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.

키워드

참고문헌

  1. Appl. Phys. Lett. v.78 no.2 Moncrystalline silicon carbide nanoelectro mechanical systems Y. T. Yang;K. L. Ekinci;X. M. H. Huang;L. M. Schiavone;M. L. Roukes https://doi.org/10.1063/1.1339262
  2. J. of KIEEME(in Korea) v.13 The fabrication of a SDB SOI substrate by electrochemical etch-stop G. S. Chung;K. D. Kang
  3. Thin-Solid Films v.355 SiC MEMS: opportunities and challenges for applications in harsh environments M. Mehregany;C. A. Zorman https://doi.org/10.1016/S0257-8972(99)00374-6
  4. Mater. Sci. Eng. v.B61 CVD growth of 3C-SiC on SOI(100) substrates with optimized interface structure F. Wischmeyer;W. Wondark;D. Leidich;E. Niemann
  5. Appl. Surf. Sci. v.123 Differences between silicon oxycarbide regions at SiC-SiO₂ prepared by plasma-assisted oxidation and thermal oxidations G. Lucovsky;H. Niimi;A. Golz;H. Kurz https://doi.org/10.1016/S0169-4332(97)00469-8
  6. Sensors & Actuators v.86 Wafer bonding of silicon wafer covered with various surface layers M. Wiegand;M. Reiche;U. Gosele;K. Gutjahr;D. Stolze;R. Longwitz;E. Hiller https://doi.org/10.1016/S0924-4247(00)00420-9
  7. Proc. 2001 Autumn Conf. KIEEME v.14 no.1 Characterization of 3C-SiC grown on Si(100) wafer K. I. Na;Y. S. Chung;J. G. Ryu;G. S. Chung
  8. Microelctronic Eng. v.36 SiO₂ as an insulator for SiC devices C. I. Harris;V. V. Afanas'ev https://doi.org/10.1016/S0167-9317(97)00041-5
  9. J. of KIEEME(in Korean) v.12 no.7 Surface characteristic of silicon-oxide film by CMP polishing H. S. Lee;S. H. Lim;M. K. Kim;B. S. Han
  10. Mater. Res. Bull. v.33 no.2 Xps studies on the oxidation behavior of SiC particles M. Sreemany;T. B. Ghosh;B. C. Pai;M. Chakraborty https://doi.org/10.1016/S0025-5408(97)00222-5
  11. J. Alloys & Compounds v.286 XPS and XRD study of crystalline 3C-SiC grown by sublimation R. J. Iwanowski;K. Fronc;W. Paszkowicz;M. Heinonen https://doi.org/10.1016/S0925-8388(98)00994-3
  12. Thin-Solid Films Deposition kinetics of silicon dioxide from tetraethylorthosilicatie by PECVD M. T. Kim
  13. Proc. of 10th IEEE MEMS Workshop Studies on SiO₂- SiO₂ bonding with hydrofluoric acid : room temperature and low stress bonding technique for MEMS H. Nakanishi;T. Nishimoto;R. Nakamuta;S. Shoji;A. Yotsumoto
  14. Sensors & Actuators v.A68 Wafer-to-wafer fusion bonding of oxidized silicon to silicon at low temperatures A. Berthold;B. Jackoby;M. J. Vellekoop
  15. Sensors & Actuators v.A70 Low temperature silicon direct bonding for application in micromechanics : bonding energies for different combinations of oxides G. Krauter;A. Schumacher;U. Gosele
  16. Jpn. J. Appl. Phys. v.28 no.10 A model for the silicon wafer bonding process R. Stengl;T. Tan;U. Gosele https://doi.org/10.1143/JJAP.28.1735