한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제15권10호
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  • Pages.865-869
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  • 2002
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Ru/RuO2전극에 성장한 PZT 박막의 특성에 관한 연구

Properties of PZI Thin film on the Ru/RuO2 Electrode

  • 강현일 (성균관대학교 정보통신공학부) ;
  • 최장현 (성균관대학교 정보통신공학부) ;
  • 박영 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • 발행 : 2002.10.01
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초록

The structural and electrical properties of PZT (lead zirconate titante) thin films grown on Pt (platinum) and Ru/Ru $O_2$(ruthenium/ruthenium oxide) electrodes were investigated. Thin films of PZT were deposited on a variety of electrodes using the rf-magnetron sputtering process. PZT films exhibited polycrystalline structure with strong PZT (100) plane and weak (211) plane for an optimizied Pt electrode and (100), (101), (111), (200), (210), (211) planes for Ru/Ru $O_2$. Switching polarization versus fatigue characteristic of Pt/Ti electrodes showed 20% degradation up to 1 $\times$ 10$_{9}$ cycles. No significant fatigue was observed in the films on Ru/Ru $O_2$ electrodes up to Ix109 test cycles. The results show that the new Ru/Ru $O_2$ bottom electrodes are expected to reduce the degradation of ferroelectric fatigue.

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참고문헌

  1. Jpn. J. Appl. Phys. v.40 Frequency agile microstrip patch antenna using piezoelectric substrates J. T. Song;I. H. Jo;Y. H. Kim https://doi.org/10.1143/JJAP.40.L515
  2. 전기전자재료학회논문지 v.7 no.2 졸-겔법으로 형성한 강유전체 PZT 박막의 고온 단시간 열처리 효과 및 전자 디바이스에의 응용 김광호
  3. 한국전기전자재료학회 2001 하계학술대회논문집 주파수 조정이 가능한 PZT air-gap antenna, 우형관;하용만;오승재;송준태
  4. 전기전자재료학논문지 v.12 no.7 PZT 강유전체 박막 캐패시터와 하부전극에 관한 연구 박영;정세민;문상일;정규원;김성훈;송준태;이준신
  5. Thin Solid Films v.375 no.1-2 A study of residual stress on rf reactively sputtered RuO₂ thin films Li Jian Meng;M. P. dos Santos https://doi.org/10.1016/S0040-6090(00)01174-3
  6. Thin Solid Films v.371 no.1-2 Formation of hillocks in Pt/Ti electrodes and their effects on short phenomena of PZT films deposited by reactive sputtering H. J. Nam;D. K. Choi;W. J. Lee https://doi.org/10.1016/S0040-6090(00)00970-6
  7. Materials Lett. v.38 Oxygen diffusion through RuO₂ bottom electrode of integrated ferroelectric capacitors J. H. Ahn;W. J. Lee;H. G. Kim https://doi.org/10.1016/S0167-577X(98)00167-0
  8. Jpn. J. Appl. Phys. v.36 $IrO_2/Pb(Zr_xTi_{1-x})O_3$(PZT)/Pt ferroelectric thin film capacitors resistant to hydrogen annealing damage Keiko Kushida Abdelghafar;Hiroshi Miki;Fumiko Yano;Yoshihisa Fujisaki https://doi.org/10.1143/JJAP.36.L1032
  9. Thin Solid Films v.32 no.1 The effects of PbTiO$_3$ thin template layer and Pt/RuO$_2$ hybrid electrode on the ferroelectric properties of sol-gel derived PZT thin film S. H. Kim;Y. S. Choi;C. E. Kim;D. Y. Yang
  10. ISAF 92 Proceedings Leakage current mechanism and accelerated unified test of lead zirconate titante thin film capacitors In K. Yoo;Seshu B. Desu
  11. J. Mater. Res. v.12 no.6 Preparation of Pb(Zr$_{0.52},Ti_{0.48})O_3$ thin films on Pt/RuO$_2$ double electrode by a new sol-gel route S. H. Kim;Y. S. Choi;C. E. Kim https://doi.org/10.1557/JMR.1997.0216
  12. 한국재료학회논문지 v.7 no.6 Sol-gel법에 의한 Pb(Zr,Ti)O$_3$박막의 강유전체 특성 고가연;이은구;박진성;이종국;이우선;이재갑
  13. Microelectronic Engineering v.29 no.1 Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors E. L. Colla;A. L. Kholkin;D. Taylor;A. K. tagantsev;K. G. Brooks;N. Setter https://doi.org/10.1016/0167-9317(95)00133-6
  14. Thin Film Ferroelectric Materials and Devices R. Ramesh