Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation and Characterization of β-C3N4 in Presence of Seed Carbon Nitride Films Deposited by Laser-Electric Discharge Method

  • Kim, J.I. (School of information technology, Korea University of Technology and Education) ;
  • Zorov, N.B. (Department of Laser Chemistry, Moscow state University) ;
  • Burdina, K.P (Department of Laser Chemistry, Moscow state University)
  • Published : 2002.09.01
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Abstract

A procedure was developed for preparing bulk carbon nitride crystals from a polymeric $\alpha$ -C$_3$N$\_$4.2/ at high pressure and temperature in the presence of seeds of crystalline carbon nitride films prepared by a high voltage discharge plasma combined with pulsed laser ablation of graphite target. The samples were evaluated by x-ray photoelectron spectroscopy (XPS), infrared (IR) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and x-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrate that the nitrogen composition in $\alpha$ -C$_3$N$\_$4.2/ material initially containing more than 58% nitrogen decreases during the annealing process and reaches a common, stable composition of ~45%. The thermobaric experiments were performed at 10-77 kbar and 350-1200 $\^{C}$.

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References

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