Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
권호 표지
DOI QR코드

DOI QR Code

Effects of Nozzle Locations on the Rarefied Gas Flows and Al Etch Rate in a Plasma Etcher

플라즈마 식각장치내 노즐의 위치에 따른 희박기체유동 및 알루미늄 식각률의 변화에 관한 연구

  • 황영규 (성균관대학교 기계공학부) ;
  • 허중식 (성균관대학교 기계공학부)
  • Published : 2002.10.01
Download PDF
⟨ Previous Next ⟩

Abstract

The direct simulation Monte Carlo(DSMC) method is employed to calculate the etch rate on Al wafer. The etchant is assumed to be Cl$_2$. The etching process of an Al wafer in a helicon plasma etcher is examined by simulating molecular collisions of reactant and product. The flow field inside a plasma etch reactor is also simulated by the DSMC method fur a chlorine feed gas flow. The surface reaction on the Al wafer is simply modelled by one-step reaction: 3C1$_2$+2Allongrightarrow1 2AIC1$_3$. The gas flow inside the reactor is compared for six different nozzle locations. It is found that the flow field inside the reactor is affected by the nozzle locations. The Cl$_2$ number density on the wafer decreases as the nozzle location moves toward the side of the reactor. Also, the present numerical results show that the nozzle location 1, which is at the top of the reactor chamber, produces a higher etch rate.

Keywords

References

  1. Economou, D. J., 2000, 'Modeling and Simulation of Plasma Etching Reactors for Microelectronics,' Thin Solid Films, Vol. 365, pp. 348-367 https://doi.org/10.1016/S0040-6090(99)01056-1
  2. Nanbu, K., 1996, 'Stochastic Solution Method of the Boltzmann Equation Ⅱ. Simple Gas, Gas Mixture, Diatomic Gas, Reactive Gas, and Plasma,' Rep. of the Institute of Fluid Science, Tohoku Univ., Sendai, Japan, Vol. 8, pp. 77-125
  3. Nanbu, K., Morimoto, T., and Suetani, M., 1999, 'Direct Simulation Monte Carlo Analysis of Flows and Etch Rate in an Inductively Coupled Plasma Reactor,' IEEE Trans. Plasma Sci., Vol. 27, No. 5, pp. 1379-1388 https://doi.org/10.1109/27.799816
  4. Font, G. I. and Boyd, I. D., 1997, 'Numerical Study of the Effects of Reactor Geometry on a Chlorine Plasma Helicon Etch Reactor,' J. Vac. Sci. Technol. A, Vol. 15, No. 2, pp. 313-319 https://doi.org/10.1116/1.580486
  5. Font, G. I., Boyd, I. D., and Balakrishnan, J., 1998, 'Effects of Wall Recombination on the Etch Rate and Plasma Composition of an Etch Reactor,' J. Vac. Sci. Technol. A, Vol. 16, No. 4, pp. 2057-2064 https://doi.org/10.1116/1.581310
  6. Serikov, V. V., Kurisawa, S., and Nanbu, K., 1996, 'Profile of Al Etch Rate Estimated from the Analysis of 3-D Rarefied Flow of $Cl_2,\;BCl_3,\;and\;AlCl_3$ in a Commerical Etcher,' Vacuum, Vol. 47, No. 6-8, pp. 1027-1029 https://doi.org/10.1016/0042-207X(96)00117-0
  7. Bird, G. A., 1994, Molecular Gas Dynamics and the Direct Simulation of Gas Flows, Clarendon Press, Oxford
  8. Hwang, Y. K. and Heo, J. S., 2002, 'Performance Analysis of a Linear Micro-Actuator Operated by Radiometric Phenomena in Rarefied Gas Flow Field,' Trans. KSME B, Vol. 26, No. 10, pp. 000-000
  9. Birdsall, C. K., 1991, 'Particle-in-Cell Charged-Particle Simulations, Plus Monte Carlo Collisions with Neutral Atoms, PIC-MCC,' IEEE Trans. Plasma Sci., Vol. 19, No. 2, pp. 65-85 https://doi.org/10.1109/27.106800
  10. Economou, D. J., Bartel, T. J., Wise, R. S., Lymberopoulos, D. P., 1995, 'Two-Dimensional Direct Simulation Monte Carlo (DSMC) of Reactive Neutral and Ion Flow in a High Density Plasma Reactor,' IEEE Trans. Plasma Sci., Vol. 23, No. 4, pp. 581-590 https://doi.org/10.1109/27.467978