참고문헌
- J. N. Nxumaio, T. Tran, Y. Li and D. J. Thomson, 'Two-dimensional carrier profiling of a 0.4um CMOS device by Schottky SCM,' IEEE 99CH36296, 37th Annual International Reliability Physics Symposium, San Diego, California, 1999 https://doi.org/10.1109/RELPHY.1999.761631
- Eu-Seok Kang, Jeong-Won Kang, H-J. Hwang and Jun-Ha Lee, 'Non-destructive one-dimensional scanning capacitance microscope dopant profile determination method and its application to three-dimensional dopant profiles,' Journal of Vacuum Science Technology A 18(4), pp. 1338-1344, 2000 https://doi.org/10.1116/1.582473
- J. F. Marchiando, J. J. Kopanski, and J. R. Lowney, 'Model Database for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements,' J. Vac. Sci. Technol. B, 74(2), pp. 272-274, 1999
- Kin, J. S. McMurray, C. C. Williams, and J. Slinkman, 'Two-Step Dopant Diffusion Study Preformed in Two Dimensions by Scanning Capacitance Microscopy and TSUPREM IV,' Journal of Applied Physics 84(3), pp. 1305-1309, 1998 https://doi.org/10.1063/1.368245
- V. V. Zavyalov, J.S. McMurray, and C.C. Williams, 'Advances in Experimental Technique for Quantitative Two-dimensional Dopant Profiling by Scanning Capacitance Microscopy,' Review of Scientific Instruments 70(1), pp. 158-164, 1999 https://doi.org/10.1063/1.1149558
- E.-S. Kang, K.-R. Byun, H.-J.Hwang, and G.-Y. Lee, '1-Dimensional SCM Modeling and Dopant Profiling for the Quantitative 3-Dimensional Impurity Doping Profiling,' Fifth International Workshop on the Measurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors, Research Triangle Park, NC, USA, March 28-31, 1999
- Eu-Seok Kang, Jung-Won Kang, and H-J. Hwang, 'Non-destructive 1-D SCM dopant profiling determination method and its application to the 3-D dopant profiling,' AVS 46th International Symposium: vacuum, thin film, surfaces interfaces & processing, Washington State Convention Center, Seattle, Washington, USA, October 25-29, 1999
- Eu-Seok Kang, Jung-Won Kang, and H-J. Hwang, 'Improved Local Capacitance Detection and a Quantitative 1-D Carrier Profile Extracted from the Scanning Capacitance Microscopy dC/dV versus V Curves,' AVS 47th International Symposium: vacuum, thin film, surfaces/interfaces & processing, Hynes Convention Center, Boston, Massachusetts, USA, October 2-6, 2000
- N Khalil, J. Faricelli, C.-L Huang, and S. Selberherr, 'Two-Dimensional Dopant Profiling of Submicron Metal-Qxide-Semiconductor Field-Effect Transistor Using Nonlinear Least Squares Inverse Modeling,' J. Vac. Sci. Technol. B, 14(1), 1996
- Mauro Zambuto, Semiconductor devices, McGraw-Hill International Editions, p. 284-332, 1989
- S. M Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1981
- Lorenzo Ciampolini, Mauro Ciappa, Paolo Malberti, Wolfgang Fichtner, 'Investigating the Accuracy of Constant-dC Scanning Capacitance Microscopy by Finite Element Device Simulations,' 1st International Workshop on Ultimate Integration of Silicon, January 20-21, 2000
- C. C. Williams, W. P. Hough, and S. A Rishton, 'Scanning capacitance microscopy on a 25nm scale,' Appl. Phy. Lett. 55(2), 10 July 1989 https://doi.org/10.1063/1.102096
- F. M marchiando, J. J. Kopanski, and J. R. Lowney, 'Model database for determining dopant profiles fro scanning capacitance microscope measurements,' J. Vac. Sci. Technol. B, 16, No. 1, Jan/Feb 1998 https://doi.org/10.1116/1.589831