한국재료학회지 (Korean Journal of Materials Research)

  • 제12권4호
  • /
  • Pages.240-247
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  • 2002
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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실리콘을 첨가한 주석 산화물 박막의 전기 화학적 특성

Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films

  • 이상헌 (부산대학교 무기재료공학과) ;
  • 박건태 (부산대학교 무기재료공학과) ;
  • 손영국 (부산대학교 무기재료공학과)
  • Lee, Sang-Heon (Dept. of Inorganic Mat. Eng., Pusan National University) ;
  • Park, Geon-Tae (Dept. of Inorganic Mat. Eng., Pusan National University) ;
  • Son, Yeong-Guk (Dept. of Inorganic Mat. Eng., Pusan National University)
  • 발행 : 2002.04.01
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초록

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

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참고문헌

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피인용 문헌

  1. and ZTO Films vol.17, pp.2, 2016, https://doi.org/10.4313/TEEM.2016.17.2.104