한국재료학회지 (Korean Journal of Materials Research)

  • 제12권5호
  • /
  • Pages.363-368
  • /
  • 2002
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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승온중 수소 분위기 제어에 의한 선택적 Si 에피텍시 성장

Selective Si Epitaxial Growth by Control of Hydrogen Atmosphere During Heating-up

  • 손용훈 (홍익대학교 금속재료공학과) ;
  • 박성계 (홍익대학교 금속재료공학과) ;
  • 김상훈 (전자통신연구소) ;
  • 남승의 (홍익대학교 금속재료공학과) ;
  • 김형준 (홍익대학교 금속재료공학과)
  • 발행 : 2002.05.01
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초록

we proposed the use of $Si_2H_ 6/H_2$ chemistry for selective silicon epitaxy growth by low-pressure chemical vapor deposition(LPCVD) in the temperature range $600~710^{\circ}C$ under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on $SiO_2$ was found, and low temperature epitaxy selective deposition on Si was achieved without addition of HCI. Total gas flow rate and deposition pressure were 16.6sccm and 3.5mtorr, respectively. In this condition, we selectively obtained high-quality epitaxial Si layers of the 350~1050$\AA$ thickness. In older to extend the selectivity, we kept high pressure $H_2$ environment without $Si_2H_6$ gas for few minutes after first incubation period and then we conformed the existence of second incubation period.

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참고문헌

  1. F. Mieno, S. Nakamura, T. Deguchi, M. Maeda, and K. Inayochi, J. Electrochem. Soc Solid-state Science and Technol., 139(4), 2320 (1987)
  2. T.O. Sedgwick, M. Berkenbiit, and T.S. Kuan, Appl. Phys. Lett, 54(26), 2589 (1989) https://doi.org/10.1063/1.101036
  3. T.O. Sedgwick, P.D. Agnello, D.N. Ngoc, T.S. Kuan, and G.Scilla, Appl. Phys. Lett, 58(17), 1896 (1991) https://doi.org/10.1063/1.105066
  4. L.A. Zazzera, and J.F. Moulder, J. Electrochem. Soc, 136(2), 484 (1989) https://doi.org/10.1149/1.2096659
  5. J.M.C. Stork, M. Arienzo, and C.Y. Wong, IEEE Trans. Electron. Dev., 32(9), 1766 (1985) https://doi.org/10.1109/T-ED.1985.22194
  6. J.M. Bonar and G.J. Parker, Materials Science and Technology, 11,31 (1995) https://doi.org/10.1179/mst.1995.11.1.31
  7. Katherine E. Violette, Mahesh K. Sanganeria, and Mehmet C. Oztuk, Gari Harris, and Dennis M. Maher, J. Electrochem. Soc, 141 (11), 2343 (1994) https://doi.org/10.1149/1.2059317
  8. J. Murota and N.Nakamura, M. Kato, N. Mikoshiba and T. Ohmi, Appl. Phys. Lett., 54(11), 1007 (1989) https://doi.org/10.1063/1.100781
  9. W.A.P. Classen and J. Electrochem. Soc. 128, 1353 (1981) https://doi.org/10.1149/1.2127635
  10. K.I. Cho, J.W. Yang, C.S. Park and S.C. Park, in proceedings of the tenth international Conference on chemical vapor deposion, CVD-X, 87-8, edited by G.W. Cullen, Electrochemical Society, Pennington, NJ, 379 (1987)
  11. J. Bloem, J. Cryst. Growth, 50, 581 (1980) https://doi.org/10.1016/0022-0248(80)90002-0
  12. T. Tatsumi, K-i. Aketagawa, M. Hiroi, and J. Sakai, J. Crystal Growth, 120, 275 (1992) https://doi.org/10.1016/0022-0248(92)90402-5