참고문헌
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Appl. Phys. Lett
v.60
no.23
Growth of C-doped p-type Inx-Ga 1-xAS(0
https://doi.org/10.1063/1.106814 - J. Cryst. Growth v.107 LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors Y. Ashizawa;T. Noda;K. Morinzuka;M. Asaka;M. Obara https://doi.org/10.1016/0022-0248(91)90578-S
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- 전기전자재료학회논문지 v.14 no.2 InAs/GaAs self-organized quantum dots 의 전기 광학적 특성 연구 김기홍;박종도;배인호;손정식;문병연;이주인
- 전기전자재료학회논문지 v.14 no.3 PLD 증착 변수에 따른 II-VI족 화합물 ZnO 반도체 박막의 발광 특성 연구 배상혁;윤일구;서대식;명재민;이상렬
- 전기전자재료학회논문지 v.13 no.10 ZnS 형광체 분말의 결정결함에 따른 발광 특성 연구 박용규;성현호;조황신;양해석;이종찬;박대희
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- Jpn. J. Appl. Phys v.35 no.12A Growth and characterization of vertical-cavity surface-emitting lasers grown on (311)A-oriented GaAs subst- rates by molecular beam epitaxy M. Takahashi;P. O. Vaccaro;T. Watanabe;T. Mukaihara;F. Koyama;K. Iga https://doi.org/10.1143/JJAP.35.6102
- Physica v.34 Temperature dependence of the energy gap in semiconductors Y. P. Varshi https://doi.org/10.1016/0031-8914(67)90062-6
- J. Korean Phys. Soc v.32 no.4 Photoluminescnece in carbon-doped GaAs grown by atmospheric-pressure metal-organic chemical vapor deposition S. Cho;E. K. Kim;S. K. Min
- J. Appl. Phys v.66 no.9 Band-gap narrowing in highly doped n- and p- type GaAs studied by photoluminescence spectroscopy G. Borghs;K. Bhattacharyya;K. Deneffe;P. V. Mieghem;R. Mertens https://doi.org/10.1063/1.343958
- Appl. Phys. Lett v.56 no.12 Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs B. J. Aitchison;N. M. Haegel;C. R. Abernathy;S. J. Pearton https://doi.org/10.1063/1.102548
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