한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제12권2호
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  • Pages.101-109
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  • 2002
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  • 1225-1429(pISSN)
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  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
권호 표지

CVD법을 이용한 SiC/C경사기능재료 증착공정의 열역학적 해석

Thermodynamic analysis of the deposition process of SiC/C functionally gradient materials by CVD technique

  • 박진호 (영남대학교 응용화학공학부) ;
  • 이준호 (영남대학교 응용화학공학부) ;
  • 신희섭 (영남대학교 응용화학공학부) ;
  • 김유택 (경남대학교 첨단산업공학부)
  • 발행 : 2002.04.01
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초록

Hot-wall CVD법으로 SiC/C 경사기능재료를 증착시키는 공정을 열역학적으로 해석하였다. Si-C-H-Cl계에 대한 열역학적 계산을 통해 공정변수(증착온도, 반응기 압력 원료 기체의 C/[Si+C]비와 H/[Si+C]비)가 증착층의 조성과 증착 수율에 미치는 영향을 조사하였고, 이를 통해 SiC/C 경사기능재료 증착에 있어서의 CVD 상평형도와 최적 공정 조건의 범위를 예측할 수 있었다.

A complex chemical equilibrium analysis was performed to study the hot-wall CVD process of the SiC/C functionally gradient materials (FGM). Thermochemical calculations of the Si-C-H-Cl system were carried out, and the effects of process variables(deposition temperature, reactor pressure, C/[Si+C] and H/[Si+C] ratios in the source gas) on the composition of deposited layers and the deposition yield were investigated. The CVD phase diagrams of the SiC/C FGM deposition were obtained, and the optimum process windows were estimated from the results.

키워드

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