References
- H.S. Oh, H.L. Lee, 'A Comparative Study between Total Thickness Variance and Site Flatness of Polished Silicon Wafer,' Jpn. J. of Appl. Phys. Vol. 40 pp. 5300-5301, 2001 https://doi.org/10.1143/JJAP.40.5300
- K. Ravi, 'Wafer flatness requirement for future technologies,' Future Fab International, Vol. 7, pp. 207-212, 1999
- R. Vandamme, Y. Xin, and Z.J. Pei, 'Method of processing semiconductor wafers,' US Patent 6114245, 2000
- R.L. Lane, 'Silicon Wafer Preparation' Handbook of Semiconductor Silicon Technology, Ed. by W. C. O'Mara, R.B. Herring, L.P. Hunt, Noyes Publication, pp. 192 - 257, 1990
- H.M. Liaw, 'Crystal Growth of Silicon,' Handbook of Semiconductor Silicon Technology, Ed. by W.C. O'Mara, R.B. Herring, L.P. Hunt, Noyes Publication, pp. 94-181, 1990
- R. Lutwack and A. Morrison, Silicon Material Preparation and Economical Wafering Methods, Noyes Publications, 1982
- R.B. Herring, 'Silicon wafer technology - state of the art 1976,' Solid State Technology/May, pp. 37-54, 1976
- E. Steffen, J. Schandl, J. Junge, H. Lundt, 'Manufacturing Processes for Advanced Silicon ULSI Wafers,' in Semiconductor Silicon/1994, Ed. by H. R. Huff, W. Bergholz, K. Sumino, The Electrochem. Soc., pp. 197-206, 1994
- H.S. Oh, S.E. Park, S.M. Jeong, S.S. Kim, H.L. Lee, 'Process induced mechanical damage and fine grinding process parameters,' To be Pblished at the 4th international sysmposium on advances in abrasive technology(ISAAT '2001)
- E. Mendel, 'Polishing of Silicon,' SCP and Sol. State Tech. Vol. 8,pp. 27-39, 1967
- R.J. Walsh, 'Process for polishing semiconductor materials,' US Patent 3170273, 1965
- G.H. Schwuttke, 'Pre- and Post-Annealing of Mechanicla Damage in Silicon Wafer,' in Silicon Material Preparation and Economical Wafering Methods, Ed by R. Lutwack, A. Morrision, Noyes Publications, pp. 562-576, 1982
- W. Kern and D.A. Puotinen, 'Clean Solution Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology,' RCA Review, Vol. 31, 187, 1970
- Test method F950-88, 'Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching,' ASTM
- H. Lundt, M. Kerstan, A. Huber, P.O. Hahn, 'Subsurface Damage of Abraded Silicon Wafer,' in Semiconductor Silicon/1994, Ed. by H.R. Huff, W. Bergholz and K. Sumino, The Electrochemical Society, pp. 218-224, 1994
- S.M.Jeong, S.E.Park, H.S.Oh and H.L.Lee, 'Fracture strength evaluation of semiconductor silicon wafering process induced damage,' Proceeding volume of annual meeting, American Society for Precision Engineering, 199-123, 2000
- ASTM F121-83
- Operation recipe, MEMC Korea Co.
- K. Kugimiya, 'Characterization of Microdeformation and Crystal Defects in Silicon Wafer Surfaces,' J. Electrochem. Soc., Vol. 130, 2123, 1983 https://doi.org/10.1149/1.2119537
- K. Kugimiya, 'Characterization of Polished Mirror Surfaces by the 'Makyoh' Principle,' Mat. Lett. Vol. 7,pp.229-233, 1988 https://doi.org/10.1016/0167-577X(88)90017-1
- YIS-200SP manual, Hologenix, Inc., Torrance, CA, USA
- K. Kugimiya, 'Makyoh topography : comparison with X-ray topography', Semicon. Sci. Technol. Vol. 7, pp. A91-94, 1992 https://doi.org/10.1088/0268-1242/7/1A/017
- S. Tokura, N. Fujino, M. Ninomiya and K. Masuda, 'Characterization of mirror-polished wafers by Makyo Method,' J. of Crystal Growth, Vol. 103, pp. 437-442, 1990 https://doi.org/10.1016/0022-0248(90)90223-8
- P. Blaustein and S. Hahn, 'Realtime Inspection of Wafer Surfaces,'Solid State Technology, Vol. 32, pp. 27-29, 1989
- O. Okabayashi, H. Shirotori, H. Sakurazawa, E. Kanda, T. Yokoyama and M. Kawashima, 'Evaluation of Directly Bonded Silicon Wafer Interface by the Magic Mirror Method,' J. of Crystal Growth, Vol. 103, pp. 456-460, 1990 https://doi.org/10.1016/0022-0248(90)90226-B
- T. S. Kuan, K. K. Shih and J. A. Vand Vechten, 'Effect of Lubricant Environment on Saw Damage in Si Wafers,' J. Electrochem. Soc., Vol. 127, 1387, 1980 https://doi.org/10.1149/1.2129904
- F. Shimura, 'Semiconductor Silicon Crystal Technology,' Academic Press. Inc., London, pp. 215-278, 1989
- Test method F28-91, 'Standard Test methods for Minority- Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photocondectivity Decay,' ASTM
- T. S. Horanyi, T. Pavelka and P.Tutto, 'In situ bulk lifetime measurement on silicon with a chemially passivated surface,' Appl. Surf. Sci., Vol. 63 pp. 306-311, 1993 https://doi.org/10.1016/0169-4332(93)90112-O
- W. M. Bullis and H. R. Huff, 'Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurement in Silicon,' J. Electrochem. Soc, Vol. 143, pp. 1399-1405, 1996 https://doi.org/10.1149/1.1836650
- D. K. Schroder. 'Carrier Lifetime in Silicon,' IEEE Trans. Electron. Devices, Vol. 44, pp. 160-170, 1997 https://doi.org/10.1109/16.554806
- Lifetime Scanner WT-85 User's Manual, Semilab Co., Budapest, Hungary
- H. S. Oh, H. J. Maeng, K. M. Bae, J. R. Kim, Y. K. Hong, J. S. Shin, J. H. Kwon, G. A. Rozgonyi and H. L. Lee, 'The Characterization of 0.1 LPD Patterns in Mass Production of Silicon Wafer,' in Semiconductor Silicon 1998, Ed. ,H. R. Huff, U. Gosele, H. Tsuya, The Electrochemical Society, 1998
- A. Mayer, 'Detection of Damage on Silicon Surgaces: Origin and Propagation of Defects,' RCA Review, Vol. 31, No. 2, pp. 414-425, 1970
- H.S. Oh, S.E. Park and H.L. Lee, 'Surface wheel pattern analysis and grinding process parameters of Silicon,' to be published at J. of KSPE, Vol. 19, No. 2, 2002
- J. Pei, S.R. Billingsley and S. Miura. 'Grinding induced subsurface cracks in silicon wafers,' International Journal of Machine Tools and Manufacture, Vol. 39, pp. 1103-1116, 1999 https://doi.org/10.1016/S0890-6955(98)00079-0