한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제15권4호
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  • Pages.289-300
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  • 2002
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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실리콘에 붕소의 고에너지 이온주입에 의한 농도분포에 관한 연구

A Study of Boron Profiles by High Energy ion Implantation in Silicon

  • 발행 : 2002.04.01
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초록

In this study, the experiments are carried out by boron ion implantation at energies ranging from 700keV to 2MeV in silicon. The distribution of boron profiles are measured by SIMS(Cameca 6f). Boron dopants profiles after high temp]erasure annealing are also explained by comparisons of experimental and simulated data. A new electronic stopping model for Monte Carlo simulation of high energy implantation is presented. Also the comparisons of profiles by profiles boron ion implantations are demonstrated and interpreted with theoretical models. Finally range moments of SIMS and SRP profiles are calculated and compared with simulation results.

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참고문헌

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