Abstract
The electrical characteristics of solid state devices such as BJT(Bipolar Junction Transistor) and MOSFET, etc, are altered by impinging nuclear radiation and temperature in the space environment. This phenomenon is well known and has been studied extensively since the early 1960's when satellites were first being designed and used in the United States. However, the studies and the developments of radiation hardening technologies for the electronic components at the industrial fields in our country has not been popular so far. The worst case design technology in the electrical circuit is required for the appropriate operation of solid state devices in the space environment. In this paper, the interface circuit used in KOMPSAT(Korea Multipurpose Satellite), which is now being operated since the one was launched in 1999, is optimally designed to accomodate the worst case design and radiation effect.
