Journal of the Korean Society for Precision Engineering (한국정밀공학회지)

Korean Society for Precision Engineering (한국정밀공학회)
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A Study on the Effect of Pattern Density and it`s Modeling for ILD CMP

패턴 웨이퍼의 화학기계적 연마시 패턴 밀도의 영향과 모델링에 관한 연구

  • Hong, Gi-Sik (Dept.of Precision Mechanical Engineering, Graduate School of Busan National University) ;
  • Kim, Hyung-Jae (Dept.of Precision Mechanical Engineering, Graduate School of Busan National University) ;
  • Jeong, Hae-Do (Busan National University)
  • 홍기식 (부산대학교 정밀기계공학과 대학원) ;
  • 김형재 (부산대학교 정밀기계공학과 대학원) ;
  • 정해도 (부산대학교 기계공학부)
  • Published : 2002.01.01
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Abstract

Generally, non-uniformity and removal rate are important factors on measurements of both wafer and die scale. In this study, we verify the effects of the pressure and relative velocity on the results of the chemical mechanical polishing and the effect of pattern density on inter layer dielectric chemical mechanical polishing of patterned wafer. We suggest an appropriate modeling equation, transformed from Preston\`s equations which was used in glass polishing, and simulate the removal rate of patterned wafer in chemical mechanical polishing. Results indicate that the pressure and relative velocity are dominant factors for the chemical mechanical polishing and pattern density effects on removal rate of pattern wafers in die scale. The modeling is well agreed to middle and low density structures of the die. Actually, the die used in Fab. was designed to have an appropriate density, therefore the modeling will be suitable for estimating the results of ILD CMP.

Keywords

References

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