ETRI Journal

  • 제24권3호
  • /
  • Pages.190-196
  • /
  • 2002
  • /
  • 1225-6463(pISSN)
  • /
  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Millimeter Wave MMIC Low Noise Amplifiers Using a 0.15 ${\mu}m$ Commercial pHEMT Process

  • Jang, Byung-Jun (Communication Satellite Development Center, ETRI) ;
  • Yom, In-Bok (Communication Satellite Development Center, ETRI) ;
  • Lee, Seong-Pal (Communication Satellite Development Center, ETRI)
  • 투고 : 2001.10.30
  • 발행 : 2002.06.30
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초록

This paper presents millimeter wave monolithic microwave integrated circuit (MMIC) low noise amplifiers using a $0.15{\mu}m$ commercial pHEMT process. After carefully investigating design considerations for millimeter-wave applications, with emphasis on the active device model and electomagnetic (EM) simulation, we designed two single-ended low noise amplifiers, one for Q-band and one for V-band. The Q-band two stage amplifier showed an average noise figure of 2.2 dB with an 18.3 dB average gain at 44 GHz. The V-band two stage amplifier showed an average noise figure of 2.9 dB with a 14.7 dB average gain at 65 GHz. Our design technique and model demonstrates good agreement between measured and predicted results. Compared with the published data, this work also presents state-of-the-art performance in terms of the gain and noise figure.

키워드

참고문헌

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