Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Chemical Vapor Deposition of Ga2O3 Thin Films on Si Substrates

  • Kim, Doo-Hyun (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Yoo, Seung-Ho (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Chung, Taek-Mo (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • An, Ki-Seok (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology) ;
  • Yoo, Hee-Soo (Department of Chemistry, Chungbuk National University) ;
  • Kim, Yun-Soo (Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology)
  • Published : 2002.02.20
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Abstract

Amorphous $Ga_2O_3$ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, $Ga(O^iPr)_3$, as single precursor. Deposition was carried out in the substrate temperature range 400-800 $^{\circ}C$. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric $Ga_2O_3$ thin films at 500-600 $^{\circ}C$. XPS depth profiling by $Ar^+$ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ${\sim}10{\AA}$. The interfacial layer of the $Ga_2O_3$/Si was measured to be ${\sim}35{\AA}$ thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

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