Journal of Information Display
- 제2권3호
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- Pages.60-65
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- 2001
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- 1598-0316(pISSN)
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- 2158-1606(eISSN)
Characterization of Lateral Type Field Emitters with Carbon-Based Surface Layer
- Lee, Myoung-Bok (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Jae-Hoon (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Kwon, Ki-Rock (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Hyung-Ju (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Hahm, Sung-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Jong-Hyun (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Lee, Jung-Hee (School of Electronic and Electrical Engineering, Kyungpook National University) ;
- Choi, Kyu-Man (Research Institute of electronic and Telecommunication Technologies, Kwandong University)
- 발행 : 2001.09.30
초록
Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.