Bulletin of the Korean Chemical Society

  • 제22권8호
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  • Pages.889-896
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  • 2001
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Reaction of Gas-Phase Bromine Atom with Chemisorbed Hydrogen Atoms on a Silicon(100)-(2${\times}$1) Surface

  • 발행 : 20010800
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초록

The reaction of gas-phase atomic bromine with highly covered chemisorbed hydrogen atoms on a silicon surface is studied by use of the classical trajectory approach. It is found that the major reaction is the formation of HBr(g), and it proceeds th rough two modes, that is, direct Eley-Rideal and hot-atom mechanism. The HBr formation reaction takes place on a picosecond time scale with most of the reaction exothermicity depositing in the product vibration and translation. The adsorption of Br(g) on the surface is the second most efficient reaction pathway. The total reaction cross sections are $2.53{\AA}2$ for the HBr formation and $2.32{\AA}2$ for the adsorption of Br(g) at gas temperature 1500 K and surface temperature 300 K.

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피인용 문헌

  1. Formation of Hydroxyl Radical from the Hydrogen Chemisorbed Silicon Surface by Incident Oxygen Atoms vol.24, pp.7, 2001, https://doi.org/10.5012/bkcs.2003.24.7.986
  2. Collision-Induced Intramolecular Energy Flow in Highly Excited Toluene vol.24, pp.8, 2001, https://doi.org/10.5012/bkcs.2003.24.8.1223
  3. HBr Formation from the Reaction between Gas-phase Bromine Atom and Vibrationally Excited Chemisorbed Hydrogen Atoms on a Si(001)-(2 X1) Surface vol.25, pp.8, 2001, https://doi.org/10.5012/bkcs.2004.25.8.1217
  4. Reaction between Gas-phase Hydrogen Atom and Chemisorbed Bromine Atoms on a Silicon(001)-(2X1) Surface vol.28, pp.12, 2001, https://doi.org/10.5012/bkcs.2007.28.12.2271
  5. Numerical investigation of HBr/He transformer coupled plasmas used for silicon etching vol.48, pp.2, 2015, https://doi.org/10.1088/0022-3727/48/2/025202