차세대 반도체 표면 클리닝 기술들의 특성 및 전망

  • 이종명 (㈜아이엠티 레이저엔지니어링그룹) ;
  • 조성호 (㈜아이엠티 레이저엔지니어링그룹)
  • Published : 2001.12.01

Abstract

A development of new surface clwaning technol ogies such as laser and aerosol in paeallel with the improvement of conventional wet mwthods becomes more essential in semiconductor industry due the confrontation of new challenges such as significant device shrink, environmental foralum inum do not work for copper as a new interconnection material, and more effective cleaning tools are required with decreasing the feature size less than 0.13 ㎛ as well as increasing the wafer size from 200 ㎜ to 300 ㎜. In this article, various cleaning techniques increasing laser cleaning are compared methodolgically hi order to understand their unique characteristics such as advantages and disadvantages according to the current clean ing issues. In particular, the current state of art of laser technique for semiconductors md prospects as a try cleaning method are described.

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